Deformación plástica en compresión de Si<sub>3</sub>N<sub>4</sub> policristalino: consideraciones sobre los modelos de solución-reprecipitación y de formación de cavidades

J. Martínez-Fernández; F. Valera-Feria; A. Ramírez de Arellano-López

doi:10.3989/revmetalm.2001.v37.i2.483

Compressive plastic deformation of polycrystalline Si₃N₄: considerations on the solution-reprecipitation model and on the cavity-formation model

Authors

J. Martínez-Fernández Departamento de Física de la Materia Condensada. Universidad de Sevilla.
F. Valera-Feria Departamento de Física de la Materia Condensada. Universidad de Sevilla.
A. Ramírez de Arellano-López Departamento de Física de la Materia Condensada. Universidad de Sevilla.

DOI:

https://doi.org/10.3989/revmetalm.2001.v37.i2.483

Keywords:

Creep, Silicon nitride, High temperature,

Abstract

Compressive creep of silicon nitride has been studied in several commercial and experimental grades of creep-resistant Si₃N₄. The temperature range was 1400-1500°C, and inert atmosphere was used to avoid long-term degradation of the samples. The creep rates at a given temperature showed more than one order of magnitude of grade to grade variability. Microstructural analysis showed the presence of cavities after deformation. When analyzed by a classic power-law equation the creep parameters n= 1 for all the grades, while Q varied from 444 to 951 kJ/mol. The activity of diffusional mechanisms is discussed. Alternatively, the results have been analyzed by means of the Luecke-Wiederhorn cavitation model.

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Published

2001-04-30

How to Cite

Martínez-Fernández, J., Valera-Feria, F., & Ramírez de Arellano-López, A. (2001). Compressive plastic deformation of polycrystalline Si3N4: considerations on the solution-reprecipitation model and on the cavity-formation model. Revista De Metalurgia, 37(2), 290–294. https://doi.org/10.3989/revmetalm.2001.v37.i2.483

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Issue

Vol. 37 No. 2 (2001)

Section

Articles

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