Compressive plastic deformation of polycrystalline Si3N4: considerations on the solution-reprecipitation model and on the cavity-formation model
Keywords:Creep, Silicon nitride, High temperature,
Compressive creep of silicon nitride has been studied in several commercial and experimental grades of creep-resistant Si3N4. The temperature range was 1400-1500°C, and inert atmosphere was used to avoid long-term degradation of the samples. The creep rates at a given temperature showed more than one order of magnitude of grade to grade variability. Microstructural analysis showed the presence of cavities after deformation. When analyzed by a classic power-law equation the creep parameters n= 1 for all the grades, while Q varied from 444 to 951 kJ/mol. The activity of diffusional mechanisms is discussed. Alternatively, the results have been analyzed by means of the Luecke-Wiederhorn cavitation model.
How to Cite
Copyright (c) 2001 Consejo Superior de Investigaciones Científicas (CSIC)
This work is licensed under a Creative Commons Attribution 4.0 International License.© CSIC. Manuscripts published in both the printed and online versions of this Journal are the property of Consejo Superior de Investigaciones Científicas, and quoting this source is a requirement for any partial or full reproduction.
All contents of this electronic edition, except where otherwise noted, are distributed under a “Creative Commons Attribution 4.0 International” (CC BY 4.0) License. You may read here the basic information and the legal text of the license. The indication of the CC BY 4.0 License must be expressly stated in this way when necessary.
Self-archiving in repositories, personal webpages or similar, of any version other than the published by the Editor, is not allowed.