Effect of dislocation density on the rhombohedral twinning stress of sapphire (α-Al2O3)

Authors

  • A. Muñoz Dpto. de Física de la Materia Condensada. Universidad de Sevilla.
  • J. Castaing Laboratoire de Recherche des Musées de France. Paris
  • A. Domínguez-Rodríguez Dpto. de Física de la Materia Condensada. Universidad de Sevilla.

DOI:

https://doi.org/10.3989/revmetalm.2001.v37.i2.482

Keywords:

Sapphire, Rhombohedral twinning, Basal slip,

Abstract


The influence of dislocations on the stress to induce rhombohedral twinning has been examined in α-Al2O3) single crystals. Dislocation densities have been modified by basal slip induced by compression at temperatures between 1.000 and 1.300 °C, at stresses up to 400 MPa. As a consequence of this pre-deformation, sapphire is more resistant to twinning at 900 °C, the hardening corresponding to a stress increase by a factor of 10. The twin structure is strongly influenced by the dislocations which impede the motion of twin boundaries; therefore, for high dislocation density very thin twin lamellae are formed contrary to the case for low density.

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Published

2001-04-30

How to Cite

Muñoz, A., Castaing, J., & Domínguez-Rodríguez, A. (2001). Effect of dislocation density on the rhombohedral twinning stress of sapphire (α-Al2O3). Revista De Metalurgia, 37(2), 285–289. https://doi.org/10.3989/revmetalm.2001.v37.i2.482

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Articles