Production and treatment of Si1-xGex films by excimer laser assisted techniques

Authors

  • J. Castro Dpto. de Física Aplicada, Univ. de Vigo
  • S. Chiussi Dpto. de Física Aplicada, Univ. de Vigo
  • J. Serra Dpto. de Física Aplicada, Univ. de Vigo
  • B. León Dpto. de Física Aplicada, Univ. de Vigo
  • M. Pérez-Amor Dpto. de Física Aplicada, Univ. de Vigo
  • S. Martelli ENEA, Dpto. INN/FIS-SPET
  • R. Larciprete ENEA, Dpto. INN/FIS-SPET
  • N. Frangis Dpt. Physics. Aristotle Univ. of Thessaloniki

DOI:

https://doi.org/10.3989/revmetalm.1998.v34.i2.663

Keywords:

Excimer laser, LCVD, PLIE, Germanium, Si-Ge alloys, Heteroepitaxy

Abstract


Heterostructures of Si1-xGex alloys on Si (100) have been achieved using two different excimer laser techniques. The first one, the Laser Induced Chemical Vapour Deposition (LCVD), was used in order to deposit germanium on Si (100) substrates via photolysis of GeH4 as precursor gas. The resulting films show a very homogeneous and amorphous structure as determined by HREM, XRD and Raman analysis. These deposited amorphous germanium films and a part of their underlaying Si (100) substrate were melted using the second technique, the Pulsed Laser Induced Epitaxy (PLIE), inducing an epitactic recrystallization of a Si-Ge alloy. The analysis of the obtained alloys by HREM, XRD, and XPS, reveals a strong dependence of the crystal quality and of the germanium concentration profile from the number of pulses.

Downloads

Download data is not yet available.

Downloads

Published

1998-04-30

How to Cite

Castro, J., Chiussi, S., Serra, J., León, B., Pérez-Amor, M., Martelli, S., Larciprete, R., & Frangis, N. (1998). Production and treatment of Si1-xGex films by excimer laser assisted techniques. Revista De Metalurgia, 34(2), 78–81. https://doi.org/10.3989/revmetalm.1998.v34.i2.663

Issue

Section

Articles

Most read articles by the same author(s)